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U6801B
Single-Channel Driver with Thermal Monitoring
Description
The singel-channel driver IC includes one non-inverted and current-limited output stage with an open collector. Thermal shutdown protects the output against critical junction temperatures. The output can sink a current of 20 mA. The digital input has Schmitt-trigger function with pull-up resistors to 5 V.
Features
D Input comparator with Schmitt-trigger characteristic D Input clamping current capability of"10 mA D Integrated protection cells dedicated to all input stages (EMC, ESD, RF) D ESD protection acording to human body model: "2000 V (C = 100 pF, R = 1.5 kW) D Output stage: - Short-circuit protected - Load-dump protected @ 1 kW - Jump start possible
D Shutdown by junction-temperature monitor D Reset with hysteresis at low voltage
Ordering Information
Extended Type Number U6801B-FP Package SO8 Remarks
Block Diagram / Applications
n.c. 1 3 n.c . VO 4
VS
7
Thermal shutdown
2
GND
Undervoltage detection VS 5 n.c. n.c. Figure 1. VI
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U6801B
Pin Configuration
n.c.
1
8
n.c.
Pin 1 2 3 4 5 6 7 8
Symbol n.c. GND n.c. VO VI n.c. VS n.c. Ground
Function Not connected Not connected Output Input Not connected Supply voltage 5 V Not connected
GND n.c. VO
2 3
7 6
VS n.c. VI
4
5
Figure 2. Pinning
Basic Circuitry
The integrated circuit U6801B requires a stabilized supply voltage (VS = 5 V"5%) to comply with its electrical characteristics. An external buffer capacitor of C = 100 nF value is recommended. An integrated 14-V Zener diode between VS and ground protects the supply pin. The input stage is provided with an integrated 250-kW pull-up resistor and can be directly connected to a microcontroller. The output stage is an open collector - capable of sinking 20 mA. Recommended external components: Pull-up resistor, R = 1 kW Capacitor to GND, C = 470 pF, see figure 3
Current Limitation of the Output Stages and Overtemperature Shut-down
A temperature-dependent current limitation in the range of 25 to 100 mA protects the stage in case of a short. Additionally, the chip temperature is monitored. For Tchip > 148_C, the output is disabled and automatically enabled with a hysteresis of TChip > 5_C.
Transients and Load Dump
An integrated 28-V Zener diode protects the output stage against transients and load-dump (Schaffner pulses). With the help of external 1-kW resistor, the output transistor is capable to handle the corresponding current which flows during each of these conditions. Apart from that, the output is short circuit and overload protected.
Functional Description
General
ON state: Low level at the input stage activates the output stage. OFF state: The internal pull-up resistor provides high level to the input comparator and deactivates the output stage. A 7-V Zener diode between input pin and GND is capable of "10 mA clamping current.
Low-Voltage Detection
When the supply voltage is switched on, a power-on reset pulse is generated internally which disables the output stage until a defined supply-voltage level is reached. The low-voltage detection is provided with a hysteresis of Vhyst = 0.5 V typically.
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U6801B
VS=5 V 100 nF VBatt Load R 1k VO
Micro- controller
VI
U6801B
C 470 pF
Figure 3. Application schematic
Absolute Maximum Ratings
Parameters Supply voltage Ambient temperature range Storage temperature range Maximum junction temperature Symbol VS Tamb Tstg Tj Value 7.0 -40 to +125 -50 to +150 +150 Unit V _C _C _C
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value 160 Unit K/W
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U6801B
Electrical Characteristics
VS = 5 V"5%, Tamb = 27_C, reference point pin 2 (GND), unless otherwise specified, see figures 1 and 3. Parameters Supply Supply voltage Supply current Low-voltage detection threshold: Low-voltage hysteresis Temperature shutdown Temperature shutdown hysteresis Input Pin 5 II = 10 mA VI II RI OFF ON Pin 4 IO = 10 mA VO 26.5 5 ILeak (IO = 20 mA) (470 pF, 1 kW, 20 V) VSat Ilimit td 25 2.5 0.7 100 5 V pF mA V mA ms VI VI Vhyst 170 250 3.3 1.8 1.5 6.7 8.5 "10 305 V mA kW V V V Input open Input closed to GND ON OFF Pin 7 VS IS IS VTH(ON) VTH(OFF) Vhyst TChip Thyst 4.75 0.8 7 3.7 3.0 0.55 140 5 5.25 3.2 13 4.6 3.8 1.05 149 V mA mA V V V _C _C Test Conditions / Pins Symbol Min. Typ. Max. Unit
Zener-diode protection voltage Zener-diode clamping current Pull-up resistor Switching threshold Hysteresis Output
Zener-diode protection voltage Integrated capacitor Leakage current Saturation voltage Current limitation Propagation delay
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U6801B
Package Information
Package SO8
Dimensions in mm
5.00 4.85 1.4 0.4 1.27 3.81 8 5 0.25 0.10 0.2 3.8 6.15 5.85 5.2 4.8 3.7
technical drawings according to DIN specifications 13034
1
4
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U6801B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
5.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
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